Spontaneous Raman Emission and Tunable Stokes Shift in Porous Silicon
نویسندگان
چکیده
In this paper, in order to generate radiation at 1.54 micron, an approach based on Raman scattering in porous silicon is presented. Experimental results, proving spontaneous Raman emission at 1.5 micron and tuning of the Stokes shift, are reported.
منابع مشابه
Spontaneous Raman emission in porous silicon at 1.5 μm and prospects for a Raman amplifier
In the last three years, the possibility of light generation and/or amplification in silicon, based on Raman emission, has achieved significant results. However, limitations inherent to the physics of silicon have also been pointed out. One possible option to overcome these limitations is to consider low dimensional silicon. In this paper, an approach based on Raman scattering in porous silicon...
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